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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The 2SB1188T100Q is a -2A PNP medium-power epitaxial planar Silicon Transistor offers low collector to emitter saturation voltage.
2SD1766 Complement

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2SB1188T100Q Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89
Voltage Rating (DC)	-32.0 V
Current Rating	-2.00 A
Power Rating	2 W
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	32 V
Continuous Collector Current	2A
hFE Min	120 @500mA, 3V
hFE Max	390
Input Power (Max)	2 W
DC Current Gain (hFE)	82
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
	Show
Size-Length	4.50 mm
Size-Width	2.5 mm
Size-Height	1.50 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not For New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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