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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

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CSD19538Q3A Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSONP-8
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	61 mΩ
Polarity	N-CH
Power Dissipation	2.8 W
Threshold Voltage	3.2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	4.9A
Rise Time	3 ns
Input Capacitance (Ciss)	454pF @50V(Vds)
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2.8W (Ta), 23W (Tc)
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Size-Length	3.15 mm
Size-Width	3 mm
Size-Height	0.9 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

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SN:H2.39164LO11863V33Q0QC0S0

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