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Updated at 25/10/2025 10:30:15(UTC+8)

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Description

The IPD600N25N3 G is a 250V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Environmentally-friendly
Easy to design in

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IPD600N25N3GATMA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.051 Ω
Polarity	N-Channel
Power Dissipation	136 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	250 V
Rise Time	10 ns
Input Capacitance (Ciss)	2350pF @100V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	136W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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