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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRF8113PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for notebook processor power and isolated DC-to-DC converters.
Low gate charge
100% Rg tested
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Ultra-low gate impedance

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IRF8113PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0056 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2.2 V
Input Capacitance	2910pF @15V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	17.2A
Rise Time	8.9 ns
Input Capacitance (Ciss)	2910pF @15V(Vds)
Fall Time	3.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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