IXYS SEMICONDUCTOR IXGT30N120B3D1 IGBT Single Transistor, 50A, 2.96V, 300W, 1.2kV, TO-268, 3Pins New
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-268-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 300 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 100 ns |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Show | |
| Size-Length | 16.05 mm |
| Size-Width | 14 mm |
| Size-Height | 5.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2016/06/20 |
| ECCN Code | EAR99 |