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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The SI4410DYTRPBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Low gate charge
Logic level drive
Low conduction losses
Low switch losses

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SI4410DYTRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.01 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1 V
Input Capacitance	1585 pF
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Rise Time	7.7 ns
Input Capacitance (Ciss)	1585pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	44 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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