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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The 1N5817G is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
Cathode indicated by polarity band
Extremely low VF
Low stored charge, majority carrier conduction
Low-power loss/high-efficiency
All external surfaces corrosion-resistant

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1N5817G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-204AL
Voltage Rating (DC)	20.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Output Current	≤1.00 A
Number of Positions	2 Position
Forward Voltage	450mV @1A
Polarity	Standard
Thermal Resistance	80℃/W (RθJA)
Max Breakdown Voltage	20 V
Forward Current	1 A
Max Forward Surge Current (Ifsm)	25 A
Maximum Forward Voltage (Max)	450 mV
Forward Current (Max)	1000 mA
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature (Max)	125 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	5.2 mm
Operating Temperature	-65℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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