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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The 2N6788 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Repetitive avalanche rating
Dynamic dV/dt rating
Hermetically sealed
Simple drive requirements

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2N6788 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-205
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Power Dissipation	20 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Input Capacitance (Ciss)	350pF @25V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	20000 mW
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Product Lifecycle Status	Active
RoHS	Non-Compliant
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17

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