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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Even with large currents this APTGT50SK170T1G infineon IGBT module from Microsemi will work in your circuit. Its maximum power dissipation is 312000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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APTGT50SK170T1G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	12 Pin
Case/Package	SP-1
Power Dissipation	312 W
Breakdown Voltage (Collector to Emitter)	1700 V
Input Capacitance (Cies)	4.4nF @25V
Input Power (Max)	312 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	312000 mW
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Size-Length	51.6 mm
Size-Width	40.8 mm
Size-Height	11.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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