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FDC2612 - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC15890745
Category:
MOSFET, MOSFET Transistor
Package:
TSOT-23-6
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FDC2612 MOSFET Transistor, N Channel, 1.1A, 200V, 0.605Ω, 10V, 4V
Stock Locations:
Availability:
2,886 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.58

Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The FDC2612 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
Fast switching speed
8nC Typical low gate charge

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FDC2612 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Voltage Rating (DC)	200 V
Current Rating	1.10 A
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.605 Ω
Polarity	N-Channel
Power Dissipation	1.6 W
Threshold Voltage	4 V
Input Capacitance	234 pF
Gate Charge	8.00 nC
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.10 A
Rise Time	6 ns
Input Capacitance (Ciss)	234pF @100V(Vds)
Input Power (Max)	800 mW
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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