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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FDD8444 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
Low miller charge
Low Qrr body diode
UIS Capability (single pulse and repetitive pulse)
Qualified to AEC-Q101

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FDD8444 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.004 Ω
Power Dissipation	227 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	40 V
Rise Time	78 ns
Input Capacitance (Ciss)	6195pF @25V(Vds)
Input Power (Max)	153 W
Fall Time	15 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	153 W
	Show
Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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