Power Field-Effect Transistor, 10A I(D), 100V, 0.013Ω, 2Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5MM, ROHS COMPLIANT, POWER 56, MLP, 8Pin

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56-8 |
| Number of Channels | 2 Channel |
| Polarity | N-CH |
| Power Dissipation | 2.2 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 10A |
| Rise Time | 4.6 ns |
| Input Capacitance (Ciss) | 1800pF @50V(Vds) |
| Input Power (Max) | 2.2 W |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 59 W |
| Show | |
| Size-Length | 5 mm |
| Size-Width | 5 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |