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FDS89141 - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC13191744
Category:
MOSFET, MOSFET Transistor
Package:
SOIC-8
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FDS89141 Dual MOSFET, Dual N Channel, 3.5A, 100V, 0.047Ω, 10V, 3.1V
Stock Locations:
Availability:
328 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.92

Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

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Description

The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability in a widely used surface-mount package
±20V Gate to source voltage
3.5A Continuous drain current
18A Pulsed drain current

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FDS89141 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.047 Ω
Polarity	Dual N-Channel
Power Dissipation	31 W
Threshold Voltage	3.1 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	3.5A
Input Capacitance (Ciss)	398pF @50V(Vds)
Input Power (Max)	1.6 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	31 W
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Size-Length	4 mm
Size-Width	5 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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