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FQA19N60 - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC77564776
Category:
MOSFET, MOSFET Transistor
Package:
TO-3-3
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FQA19N60 Power MOSFET, N Channel, 18.5A, 600V, 380mohm, 10V, 5V
Stock Locations:
Availability:
1,385 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 2.81

Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

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Description

The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested

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FQA19N60 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Voltage Rating (DC)	600 V
Current Rating	18.5 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	380 mΩ
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	18.5 A
Rise Time	210 ns
Input Capacitance (Ciss)	3600pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	135 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 W
	Show
Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	18.9 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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