Инфраструктурный модуль IGBT INFINEON FS50R06W1E3, транзистор N-канала, 50 А, 1,45 В, 205 Вт, 600 В, модуль

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Screw |
| Number of Pins | 18 Pin |
| Case/Package | EASY1B-1 |
| Number of Positions | 18 Position |
| Polarity | N-Channel |
| Power Dissipation | 205 W |
| Operating Temperature (Max) | 150 ℃ |
| Show | |
| Size-Length | 62.8 mm |
| Size-Width | 33.8 mm |
| Size-Height | 12 mm |
| Operating Temperature | -40℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |