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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
3.5dB Noise figure (50R) at 1GHz
<1pA Collector to collector leakage
Complete isolation between transistors

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HFA3096BZ Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Voltage Rating (DC)	8.00 V
Current Rating	65.0 mA
Number of Positions	16 Position
Polarity	NPN, PNP
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	12V, 15V
Continuous Collector Current	0.065A
hFE Min	20
Input Power (Max)	150 mW
DC Current Gain (hFE)	130
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Length	10 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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