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HMC327MS8GE - ADI
Manufacturer:
ADI
ManyChip's Part#:
MC535275
Category:
Amplifier chip
Package:
MSOP-8
Datasheet:
Datasheet 3D Model
Description:
ANALOG DEVICES HMC327MS8GE RF Amplifier IC, 21dB Gain / 5dB Noise, 3GHz to 4GHz, 5V, HMSOP-8
Stock Locations:
Availability:
1,322 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 16.9

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

Product Details
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
Applications
Wireless Local Loop
### Features and Benefits
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count

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HMC327MS8GE Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	MSOP-8
Frequency	3GHz ~ 4GHz
Supply Voltage (DC)	5.00V (max)
Supply Current	250 mA
Number of Channels	1 Channel
Number of Positions	8 Position
Power Dissipation	1.88 W
Output Power	27 dBm
Gain	21 dB
Test Frequency	3.5 GHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1880 mW
Supply Voltage	5 V
Supply Voltage (Max)	5 V
	Show
Size-Length	3.1 mm
Size-Width	3.1 mm
Size-Height	0.95 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/12/17

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