The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 16 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 1820pF @75V(Vds) |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 W |
| Show | |
| Size-Length | 10.36 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.95 mm |
| Operating Temperature | -55℃ ~ 175℃ |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |