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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRF7104PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
Advanced process technology
Ultra low ON-resistance
Surface-mount device
Dynamic dV/dt rating
Fast switching performance

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IRF7104PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	Dual P-Channel
Power Dissipation	2 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	2.3A
Rise Time	16 ns
Thermal Resistance	62.5℃/W (RθJA)
Input Capacitance (Ciss)	290pF @15V(Vds)
Input Power (Max)	2 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	3.9 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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