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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRFR320TRPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

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IRFR320TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.8 Ω
Polarity	N-Channel
Power Dissipation	42 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	400 V
Continuous Drain Current (Ids)	3.10 A
Rise Time	14 ns
Input Capacitance (Ciss)	350pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	42 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
Minimum Packing Quantity	2000
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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- Please confirm with the logistics company in advance for remote areas.
(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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