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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRLB3034PBF from International Rectifier is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, DC motor drive, hard switched and high frequency circuits.
Enhanced body diode dV/dt and dI/dt capability
Fully characterized capacitance and avalanche SOA
Very low Rds(on) at 4.5V Vgs
Superior RxQ at 4.5V VGS
Optimized for logic level drive
Drain to source voltage (Vds) of 40V
Gate to source voltage of ±20V
On resistance Rds(on) of 1.4mohm at Vgs 10V
Power dissipation Pd of 375W at 25°C
Operating junction temperature range from -55°C to 175°C

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IRLB3034PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0014 Ω
Polarity	N-CH
Power Dissipation	375 W
Threshold Voltage	2.5 V
Input Capacitance	10315pF @25V
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Continuous Drain Current (Ids)	343A
Rise Time	827 ns
Input Capacitance (Ciss)	10315pF @25V(Vds)
Input Power (Max)	375 W
Fall Time	355 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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