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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
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IRLL014NTRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.14 Ω
Polarity	N-CH
Power Dissipation	2.1 W
Threshold Voltage	2 V
Input Capacitance	230 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	2.8A
Rise Time	4.9 ns
Input Capacitance (Ciss)	230pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	2.9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.739 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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