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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Encapsulating epoxy meets UL94V-0 flammability
miniBLOC with aluminium nitride isolation
Fast recovery diode
Unclamped Inductive Switching (UIS) rated
Low inductance offers easy to drive and protect
High power density
Easy to mount
Space-saving s

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IXFN180N15P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.011 Ω
Polarity	N-Channel
Power Dissipation	680 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	180 A
Rise Time	32 ns
Reverse recovery time	200 ns
Input Capacitance (Ciss)	7000pF @25V(Vds)
Input Power (Max)	680 W
Fall Time	36 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	680000 mW
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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