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IXFR140N30P - IXYS Semiconductor
Manufacturer:
IXYS Semiconductor
ManyChip's Part#:
MC66451650
Category:
MOSFET, MOSFET Transistor
Package:
TO-247-3
Datasheet:
Datasheet 3D Model
Description:
Single N-Channel 300V 300W 185NC Through Hole Power Mosfet - ISOPLUS247
Stock Locations:
Availability:
270 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 20.97

Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
Unclamped inductive switching (UIS) rating
Low package inductance - Easy to drive and to protect
Easy to mount
Space saving
2500V Electrical isolation voltage

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IXFR140N30P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel
Power Dissipation	360 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	82.0 A
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	14800pF @25V(Vds)
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	300W (Tc)
	Show
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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