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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This IXTA6N50D2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

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IXTA6N50D2 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	550 mΩ
Power Dissipation	300 W
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Rise Time	72 ns
Input Capacitance (Ciss)	2800pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	43 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	9.65 mm
Size-Width	10.41 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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