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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

100 V, 5.1 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications

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PBSS306NZ Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SC-73
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	5.1A
hFE Min	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant

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