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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dV/dt capability
100% Avalanche tested
Application oriented characterization
-55 to 175°C Operating junction temperature

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STD20NF06LT4 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	60.0 V
Current Rating	24.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.032 Ω
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±18.0 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	50 ns
Input Capacitance (Ciss)	660pF @25V(Vds)
Input Power (Max)	60 W
Fall Time	12 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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