STGD3HF60HDT4 ST Microelectronics - IGBT Transistor, IGBT Module

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STGD3HF60HDT4 - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC19004703
Category:
IGBT Transistor, IGBT Module
Package:
TO-252-3
Datasheet:
Datasheet 3D Model
Description:
Транзистор IGBT N-CH 600 В 7,5 А 38000 мВт 3 контакта (2+штырьки) типа DPAK T/R
Stock Locations:
Availability:
288 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 1.51

Updated at 16/09/2026 10:30:15(UTC+8)

Certifications

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Description

Этот транзистор IGBT STGD3HF60HDT4 от STMicroelectronics является электронным переключателем, способным обрабатывать большие токи при минимальном усилии на затвор. Его максимальное рассеивание мощности составляет 38000 мВт. Максимальное напряжение между коллектором и эмиттером — 600 В. Продукт упаковывается в пленку и банки для безопасной доставки и удобства установки компонентов. Минимальная рабочая температура этого транзистора составляет -55 °C, максимальная — 150 °C. Транзистор изготовлен в одном исполнении.

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	38 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	85 ns
Rating Power (Max)	38 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	38000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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