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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The STGE50NC60VD is a very fast IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix V identifies a family optimized for high frequency. It is suitable for high frequency inverters, SMPS and PFC in both hard switching and resonant topologies.
High current capability
High frequency operation
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery anti-parallel diode

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STGE50NC60VD Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Positions	4 Position
Polarity	N-Channel
Power Dissipation	260 W
Rise Time	17.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	4.55nF @25V
Input Power (Max)	260 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260 W
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Size-Length	38.2 mm
Size-Width	24.15 mm
Size-Height	12.2 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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