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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

If you require a general purpose BJT that can handle high voltages, then the NPN TIP31BG BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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TIP31BG Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	80.0 V
Current Rating	3 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	3.125℃/W (RθJC)
Continuous Collector Current	3A
hFE Min	10 @3A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Material	Silicon
Weight	0.004535924 kg
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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