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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for high-reliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as well as a low profile U4 surface mount. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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2N3501UB Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SMD-3
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	150 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
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