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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Jump-start your electronic circuit design with this versatile PNP 2N3810 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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2N3810 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	6 Pin
Case/Package	TO-78-6
Power Dissipation	0.35 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	150 @1mA, 5V
Input Power (Max)	350 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	350 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

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