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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Easily implement this 2N5116 JFET from Central Semiconductor in your electronic circuit to use it as an electrical switch, amplifier, or voltage-controlled resistor. Its maximum power dissipation is 500 mW. This junction field effect transistor has an operating temperature range of -65 °C to 200 °C. It is made in a single configuration.

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2N5116 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-206
Drain to Source Resistance (on) (Rds)	150 Ω
Power Dissipation	500 mW
Reverse Breakdown Voltage	30 V
Input Capacitance (Ciss)	25pF @15V(Vds)
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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