RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3Pin

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Voltage Rating (DC) | 4.00 V |
| Current Rating | 7 mA |
| Breakdown Voltage | -30.0 V |
| Polarity | N-Channel |
| Power Dissipation | 350 mW |
| Drain to Source Voltage (Vds) | 30.0 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 mW |
| Voltage Rating | 30 V |
| Show | |
| Size-Height | 5.33 mm |
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |