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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS 150 WATTS
. . . designed for general−purpose amplifier and low frequency switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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2N6052 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	-100 V
Current Rating	-12.0 A
Polarity	PNP
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	12A
hFE Min	750 @6A, 3V
hFE Max	18000
Input Power (Max)	150 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
	Show
Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

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- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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