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Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The 2N6796 is an N-channel Hi-Rel MOSFET Power Transistor features an efficient geometry and unique processing of this latest state of the art design achieves very low on-state resistance combined with high transconductance. This IRFF130 HEXFET technology MOSFET features voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Repetitive avalanche ratings
Dynamic dv/dt rating
Hermetically sealed
Simple drive requirements
Ease of paralleling

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2N6796 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-205
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Power Dissipation	25 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Rise Time	75 ns
Fall Time	45 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
RoHS	Non-Compliant
Lead-Free Status	Lead Free
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17

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