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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This APT150GN120J IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.

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APT150GN120J Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227
Voltage Rating (DC)	1.20 kV
Current Rating	215 A
Power Dissipation	625000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	9.5nF @25V
Input Power (Max)	625 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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