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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
Features
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High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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BDV64B Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Case/Package	TO-218-3
Voltage Rating (DC)	-100 V
Current Rating	-10.0 A
Polarity	PNP
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	10A
hFE Min	1000 @5A, 4V
Input Power (Max)	125 W
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	30
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

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