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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
Features | | Benefits
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| | | | |
700 V @ TJ = 150 oC
| |
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 33 nC)
| |
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
| |
Lower switching loss
Optimized Capacitance
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Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
| |
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 159 mΩ
| |
100% Avalanche Tested
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RoHS Compliant
| |

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FCP190N65S3 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.159 Ω
Power Dissipation	144 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	650 V
Rise Time	22 ns
Input Capacitance (Ciss)	1350pF @10V(Vds)
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	144000 mW
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Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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