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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
Low gate charge
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
Small footprint
Low profile

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FDC6305N Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.08 Ω
Power Dissipation	0.96 W
Threshold Voltage	900 mV
Drain to Source Voltage (Vds)	20 V
Rise Time	8.5 ns
Input Capacitance (Ciss)	310pF @10V(Vds)
Input Power (Max)	700 mW
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	960 mW
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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SN:H2.47259LO26387V37Q0QC0S0

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