FF600R12IE4 Infineon - IGBT Transistor, IGBT Module

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FF600R12IE4 - Infineon
Manufacturer:
Infineon
ManyChip's Part#:
MC120315155
Category:
IGBT Transistor, IGBT Module
Package:
PRIME-2
Datasheet:
Datasheet 3D Model
Description:
INFINEON FF600R12IE4 IGBT массив и модуль транзистор, PrimePACK™2, N-канал, 600 А, 1,75 В, 3,35 кВт, 1,2 кВ, модуль
Stock Locations:
Availability:
111 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 216.28

Updated at 16/09/2026 10:30:15(UTC+8)

Certifications

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Description

Краткий обзор характеристик:
Расширенный диапазон рабочей температуры T(tvj op)
Высокая стабильность постоянного тока
Высокая устойчивость к короткому замыканию, самоограничение тока короткого замыкания
Низкие потери при переключении
Непревзойденная надежность
V(cesat) с положительным температурным коэффициентом
Изоляция 4 кВ переменного тока в течение 1 мин
Корпус с CTI > 400
Большие пути утечки и воздушные зазоры
Высокая мощность и устойчивость к термоциклированию
Подложка для низкого теплового сопротивления
Сертифицировано UL
Преимущества:
Высокая плотность мощности
Стандартизированный корпус

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	10 Pin
Case/Package	PRIME-2
Polarity	N-Channel
Power Dissipation	3.35 kW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	37nF @25V
Rating Power (Max)	3350 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	40 ℃
	Show
Size-Length	172 mm
Size-Width	89 mm
Size-Height	38 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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