FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20A, 600V, 208W, 600V, TO-263, 3Pins

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 208 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 208 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208 W |
| Show | |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |