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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved system reliability in PFC and soft switching topologies
Switching loss improvements
Lower conduction loss
175°C Maximum junction temperature rating

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FQP17P06 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-60.0 V
Current Rating	-17.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	120 mΩ
Polarity	P-Channel
Power Dissipation	79 W
Input Capacitance	690 pF
Gate Charge	21.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	-17.0 A
Rise Time	100 ns
Input Capacitance (Ciss)	900pF @25V(Vds)
Input Power (Max)	79 W
Fall Time	60 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	79 W
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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