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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FQP47P06 is a -60V P-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
Low gate charge (typical 84nC)
Low Crss (typical 320pF)
100% Avalanche tested
±25V Gate to source voltage
62.5°C/W Thermal resistance, junction to ambient
0.94°C/W Thermal resistance, junction to case

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FQP47P06 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.021 Ω
Power Dissipation	160 W
Threshold Voltage	4 V
Input Capacitance	3600 pF
Drain to Source Voltage (Vds)	60 V
Rise Time	910 ns
Input Capacitance (Ciss)	2800pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	400 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160000 mW
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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SN:H2.71203LO2390V46Q0QC0S0

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