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Updated at 31/10/2025 10:30:15(UTC+8)

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Description

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 10.5 A, 400 V, RDS(on)= 530 mΩ(Max.) @ VGS= 10 V, ID= 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested

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FQPF11N40C Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	400 V
Current Rating	10.5 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	530 mΩ
Polarity	N-Channel
Power Dissipation	44 W
Drain to Source Voltage (Vds)	400 V
Breakdown Voltage (Drain to Source)	400 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	10.5 A
Rise Time	89 ns
Input Capacitance (Ciss)	1090pF @25V(Vds)
Input Power (Max)	44 W
Fall Time	81 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	44W (Tc)
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Size-Length	10.36 mm
Size-Width	4.9 mm
Size-Height	16.07 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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