Модуль IGBT, транзистор N-канальный, 35 А, 1,85 В, 225 Вт, 1,2 кВ, модуль

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Screw |
| Number of Pins | 18 Pin |
| Case/Package | AG-EASY1B-1 |
| Polarity | N-Channel |
| Power Dissipation | 225 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 2nF @25V |
| Rating Power (Max) | 225 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 225 W |
| Show | |
| Size-Length | 62.8 mm |
| Size-Width | 33.8 mm |
| Size-Height | 12 mm |
| Operating Temperature | -40℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| Packaging | Tray |
| RoHS | RoHS Compliant |
| Lead-Free Status | |
| REACH SVHC Compliance | No SVHC |