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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Product Details
The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 V power supply.
The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna.
Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.
**Applications**
Point to point radios
Point to multipoint radios
Very small aperture terminals (VSATs) and satellite communications (SATCOMs)
Military electronic warfare (EW) and electronic counter measures (ECM)
### Features and Benefits
High saturated output power (PSAT): 36.5 dBm at 30% power added efficiency (PAE)
High output third-order intercept (IP3): 44 dBm typical
High gain: 28 dB typical
High output power for 1 dB compression (P1dB): 36 dBm typical
Total supply current: 2200 mA at 7 V
40-lead, 6 mm × 6 mm LFCSP package: 36 mm22

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HMC1121LP6GE Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	40 Pin
Case/Package	LFCSP-40
Number of Channels	1 Channel
Power Dissipation	20500 mW
Gain	28 dB
Test Frequency	7.5GHz ~ 8.5GHz
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	20500 mW
Supply Voltage (Max)	7.5 V
Supply Voltage (Min)	5 V
	Show
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	3A001B2B

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