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HMC635 - ADI
Manufacturer:
ADI
ManyChip's Part#:
MC4286630
Category:
Amplifier chip
Package:
Die
Datasheet:
Datasheet 3D Model
Description:
ANALOG DEVICES HMC635 RF Amplifier IC, 19dB Gain / 7dB Noise, 18GHz to 40GHz, 4.5V to 5.5V, Gel Pack
Stock Locations:
Availability:
262 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 115.92

Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

Product Details
The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.
Applications
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
LO Driver for Mixers
Military & Space
### Features and Benefits
Gain: 19.5 dB
P1dB: +23 dBm
Output IP3: +29 dBm
Saturated Power:
+24 dBm @ 15% PAE
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output<
Die Size: 1.95 x 0.84 x 0.10 mm

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HMC635 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	8 Pin
Case/Package	Die
Frequency	18GHz ~ 40GHz
Supply Voltage (DC)	4.50V (min)
Number of Channels	1 Channel
Power Dissipation	1.45 W
Gain	19 dB
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1450 mW
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	4.5 V
	Show
Operating Temperature	-55℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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