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HMC659 - ADI
Manufacturer:
ADI
ManyChip's Part#:
MC11919230
Category:
Amplifier chip
Package:
Die
Datasheet:
Datasheet 3D Model
Description:
ANALOG DEVICES HMC659 RF Amplifier IC, 17.8dB Gain / 3dB Noise, DC to 15GHz, 7.5V to 8.5V, Gel Pack
Stock Locations:
Availability:
289 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 439.34

Updated at 04/12/2025 10:30:15(UTC+8)

Certifications

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Description

Product Details
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
### Features and Benefits
P1dB Output Power: +26.5 dBm
Gain: 19.1 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm

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HMC659 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	7 Pin
Case/Package	Die
Frequency	0Hz ~ 15GHz
Supply Voltage (DC)	7.50V (min)
Supply Current	300 mA
Number of Channels	1 Channel
Power Dissipation	3690 mW
Gain	17.8 dB
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3690 mW
Supply Voltage	8 V
Supply Voltage (Max)	8.5 V
Supply Voltage (Min)	7.5 V
	Show
Operating Temperature	-55℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/12/17

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