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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Cycle-by-cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs

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IR2112PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	14 Pin
Case/Package	PDIP-14
Supply Voltage (DC)	10.0V (min)
Operating Voltage	10V ~ 20V
Power Rating	1.6 W
Rise/Fall Time	80ns, 40ns
Number of Outputs	2 Output
Output Voltage	600 V
Output Current	200.420 mA
Number of Channels	2 Channel
Number of Positions	14 Position
Power Dissipation	1600 mW
Quiescent Current	180 µA
Rise Time	130 ns
Fall Time	65 ns
Fall Time (Max)	65 ns
Fall Time (Max)	130 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	20.19 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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